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HAT2168H
Silicon N Channel Power MOS FET Power Switching
REJ03G0046-0600Z Rev.6.00 Jun.02.2003
Features
* * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V)
Outline
LFPAK
5
5 D
3 12
4
4 G
1, 2, 3 Source 4 Gate 5 Drain
SSS 123
Rev.6.00, Jun.02.2003, page 1 of 10
HAT2168H
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP
Note 2
Ratings 30 20 30 120 30 15 22 15 8.33 150 - 55 to + 150
Unit V V A A A A mJ W C/W C C
EAR Note 2 Pch
Note3
ch-C Tch Tstg
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc=25C
Rev.6.00, Jun.02.2003, page 2 of 10
HAT2168H
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Symbol Min V(BR)DSS 30 Typ -- -- -- -- -- 6.0 8.8 50 1730 400 130 0.55 11 5 2.4 8 20 40 4 0.85 25 Max -- -- 10 1 2.5 7.9 13.5 -- -- -- -- -- -- -- -- -- -- -- -- 1.10 -- Unit V V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns VDD = 10 V VGS = 4.5 V ID = 30 A VGS = 10 V, ID = 15 A VDD 10 V RL = 0.67 Rg = 4.7 IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 100 A/ s Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz
Gate to source breakdown voltage V(BR)GSS 20 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf trr -- -- 1.0 -- -- 30 -- -- -- -- -- -- -- -- -- -- -- -- --
Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Notes: 4. Pulse test
Rev.6.00, Jun.02.2003, page 3 of 10
HAT2168H
Main Characteristics
Power vs. Temperature Derating 40
Pch (W) I D (A)
Maximum Safe Operation Area 500
10 s
100
DC
30
10
Channel Dissipation
Drain Current
Op
PW
era
1m
10
=1
s
0
s
20
tio
nT
0m
c=
s
1 Operation in this area is 0.1 limited by RDS(on) Ta = 25C 1 shot Pulse
25
C
10
0
50
100
150 Tc (C)
200
Case Temperature
0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
Typical Output Characteristics 50 10 V 3.2 V
I D (A) (A)
Typical Transfer Characteristics 50 V DS = 10 V Pulse Test 40
40
4.5 V
3.0 V
30
2.8 V
ID Drain Current
30
Drain Current
20
2.6 V
VGS = 2.4 V
20 Tc = 75C 10 25C -25C 0 1 2 3 Gate to Source Voltage 5 4 V GS (V)
10
Pulse Test 0 2 4 6 Drain to Source Voltage 8 10 V DS (V)
Rev.6.00, Jun.02.2003, page 4 of 10
HAT2168H
Drain to Source Saturation Voltage vs. Gate to Source Voltage 250 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 5 2 1 1 0.3 3 10 100 30 Drain Current I D (A) 1000 VGS = 4.5 V
V DS(on) (mV)
200
Drain to Source Voltage
150 I D = 20 A 100 10 A 50 5A 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20
Drain to Source On State Resistance R DS(on) (m )
10 V
Static Drain to Source on State Resistance R DS(on) (m )
Pulse Test 16 I D = 20 A
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 20
Forward Transfer Admittance vs. Drain Current 100 30 10 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 25C Tc = -25C 75C
12 V GS = 4.5 V 8 5 A, 10 A, 20 A 4 0 -25 10 V 10 A, 5A
0 25 50 75 100 125 150 Case Temperature Tc (C)
Drain Current I D (A)
Rev.6.00, Jun.02.2003, page 5 of 10
HAT2168H
Body-Drain Diode Reverse Recovery Time 100 10000 3000 1000 300 100 30 10 0 VGS = 0 f = 1 MHz 5 10 15 20 25 30 Coss Crss Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
Ciss
50
20 di/dt = 100 A/s VGS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
10 0.1
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
Switching Characteristics 20
V DS (V)
50
V GS (V)
I D = 30 A V GS V DD = 25 V 10 V 5V
100 t d(off) tr
Switching Time t (ns)
40
16
30
Drain to Source Voltage
30 V DS 20
12
Gate to Source Voltage
10
t d(on) tf
8
10
V DD = 25 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc)
4 0 40
3 V GS = 10 V , VDS = 10 V Rg = 4.7 , duty < 1 % 0.2 1 2 10 30 Drain Current I D (A) 100
0
1 0.1
Rev.6.00, Jun.02.2003, page 6 of 10
HAT2168H
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating 25 I AP = 15 A V DD = 15 V duty < 0.1 % Rg > 50
50
(A)
10 V 40 5V V GS = 0 30
20
Reverse Drain Current IDR
15
20
10
10 Pulse Test 0 0.4 0.8 1.2 1.6 V SD (V) 2.0
5 0 25
Source to Drain Voltage
50 75 100 125 150 Channel Temperature Tch (C)
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 L * IAP2 * VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Rev.6.00, Jun.02.2003, page 7 of 10
HAT2168H
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 8.33C/ W, Tc = 25C
PDM
0.03
0.02 1 0.0
1
D=
PW T
PW T
sh
p ot
uls
e
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.6.00, Jun.02.2003, page 8 of 10
HAT2168H
Package Dimensions
As of January, 2003
Unit: mm
4.9 5.3 Max 4.0 0.2 5
0.25 -0.03
+0.05
3.3
1.0
3.95
1
4
6.1 -0.3
+0.1
0 - 8
1.1 Max +0.03 0.07 -0.04
0.75 Max 1.27 0.10 *0.40 0.06
0.25 M
0.6 -0.20 1.3 Max
+0.25
*0.20 -0.03
+0.05
*Ni/Pd/Au plating
Package Code JEDEC JEITA Mass (reference value)
LFPAK -- -- 0.080 g
Rev.6.00, Jun.02.2003, page 9 of 10
4.2
HAT2168H
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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Colophon 0.0
Rev.6.00, Jun.02.2003, page 10 of 10

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